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PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 - 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2
PTFA212401F Package H-37260-2
Features
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW
* *
35 30
Thermally-enhanced packages, Pb-free and RoHS compliant Broadband internal matching Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = 47.0 dBm - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = -35 dBc - Adjacent channel power = -40 dBc Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 15.8 dB - Efficiency = 34% - Adjacent channel power = -33 dBc Typical CW performance, 2140 MHz, 30 V - Output power at P-1dB = 240 W - Efficiency = 54% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power
Adjacent Channel Power Ratio (dB)
-30 -35
*
ACPR Up
-40 -45 -50 -55 -60 36 38 40 42 44 46 48 25
ACPR Low
20 15
Drain Efficiency (%)
*
Efficiency
10 5
*
Average Output Power (dBm)
* * *
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11
*See Infineon distributor for future availability.
Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
RF Characteristics
Two-Carrier WCDMA Measurements (tested in Infineon test fixture)
1 = 2135 MHz, 2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
14.8 26 --
Typ
15.8 28 -35.0
Max
-- -- -33
Unit
dB % dBc
D
IMD
Two-tone Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, 1 = 2140 MHz, 2 = 2141 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion
Symbol
Gps
Min
-- -- --
Typ
15.8 38.5 -28
Max
-- -- --
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 30 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.03 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.6 A VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 50 W Average WCDMA) Data Sheet 2 of 11 TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 761 4.35 -40 to +150 0.23
Unit
V V C W W/C C C/W Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version PTFA212401E V4 PTFA212401F V4 Package Outline H-36260-2 H-37260-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Shipping Tray Tray
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
VDD = 30 V, = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
-30 -35 -40 -45 -50 -55
40
-5
Gain (dB), Efficiency (%)
3rd Order IMD (dBc)
2.0 A 1.8 A
30 25
-15 -20
Efficiency
20 15 10 2050 -25 -30 -35 2200
1.4 A
1.6 A
Gain
2080 2110 2140 2170
34
36
38
40
42
44
46
Output Power, PEP (dBm)
Frequency (MHz)
*See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 04, 2009-10-05
Input Return Loss (dB)
2.2 A
35
Return Loss
-10
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, = 2140 MHz
-20 -25 -30 -35 -40 -45 -50 -55 0 5 10 15 20 25 30 35 40
Intermodulation Distortion Products vs. Tone Spacing
VDD = 30 V IDQ = 1600 mA , = 2140 MHz, Intermodulation Distortion (dBc) POUT = 53 dBm PEP
17 16
65 55 45 35
Gain
Gain (dB)
15 14 13 12 0 40 80 120 160 200
Drain Efficiency (%)
3rd Order
7th
TCASE = 25C Efficiency TCASE = 90C
25 15 240
5th
Output Power (W)
Tone Spacing (MHz)
Voltage Sweep
IDQ = 1600 mA, = 2140 MHz, tone spacing = 1 MHz, Output Power (PEP) = 53 dBm Efficiency 3rd Order IMD (dBc)
-20 40
Intermodulation Distortion Products vs. Output Power
VDD = 30 V, IDQ = 1600 mA,
50 -20
-10
1 = 2137.5 MHz, 2 = 2142.5 MHz Up Low
Gain (dB), Drain Efficiency (%)
Intermodulation Distortion (dBc)
-30
IM3
-40
IM5
-30
30
IM3 Up
-40 20
-50
Gain
-50 24 26 28 30 32 10
IM7
-60 10 100 1000
Supply Voltage (V)
Output Power, PEP (W)
Data Sheet
4 of 11
Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression (PARC) at various Power Levels
100 10
Power Gain vs. Power Sweep (CW) over Temperature
VDD = 30 V, IDQ = 1500 mA, = 2140 MHz
18 17
VDD = 30 V, IDQ = 1600 mA, = 2170 MHz, single-carrier WCDMA input PAR = 7.5 dB
-15C 25C 85C
Power Gain (dB)
Probability (%)
1
48 dBm 52 dBm 46 dBm Input
16 15 14 13 12
0.1 0.01
51 dBm 50 dBm
0.001 1 2 3 4 5 6 7 8
1
10
100
1000
Peak-to-Average (dB)
Output Power (W)
Two-tone Drive-up
VDD = 30 V, IDQ = 1600 mA, = 2140 MHz, tone spacing = 1 MHz Intermodulation Distortion (dBc)
-25 -30 -35 -40 -45 -50 -55 -60 -65 44 46 48 50 52 54 50
-25
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing Efficiency IM3
-35 -40 -45 -50 -55 34 36 38 40 42 44 46 48 25 20 15
35 30
IM3 (dBc), ACPR (dBc)
Efficiency IM3 IM5
45 40 35 30 25 20
-30
Drain Efficiency (%)
IM7
ACPR
15 10
10 5
Output Power, PEP (dBm)
Output Power, avg. (dBm)
Data Sheet
5 of 11
Rev. 04, 2009-10-05
Drain Efficiency (%)
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.44 A 1.32 A 2.20 A 3.30 A 6.61 A 9.91 A 13.22 A 16.52 A
Normalized Bias Voltage (V)
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80
100
Case Temperature (C)
Broadband Circuit Impedance
OR -
Z0 = 50
-->
D
A RD
Z Source
Z Load
GEN E
RA T
G
0.0
0.1
D LOAD T OW AR
Z Source
2080 M H z 2200 M H z
0.1
Frequency
MHz 2080 2110 2140 2170 2200 R
Z Source
jX -4.250 -4.320 -4.380 -4.350 -4.460 10.050 9.750 9.500 9.280 9.000
Z Load
R 1.140 1.080 1.090 1.130 1.450 jX 2.07 2.38 2.65 2.89 3.11
<---
W
AV
S NGT H E LE
0.2
Data Sheet
6 of 11
Rev. 04, 2009-10-05
0.2
S
0.2
0 .1
Z Load
2200 M H z 2080 M H z
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit
0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F C3 0.001F
R3 2K V R8 2K V R5 2K V
R6 5.1K V C4 4.7F 16V C5 0.1F C6 8.2pF C13 8.2pF C14 1F C15 1F
L1 VDD C16 2.2F C17 0.1F C18 10F 50V C19 100F 50V
l8
C8 8.2pF J1
l11
C27 0.3pF C29 0.5pF C31 0.7pF l 17 C32 0.7pF C33 8.2pF
DUT
l1
l2
C7 0.7pF
l3
l4
C9 1.3pF
l5
l6
l7
l10
l13
l14
C28 0.3pF
l15
l 16 C30 0.5pF
l18
l19
l9
R7 5.1K V C10 4.7F 16V C11 0.1F C12 8.2pF
l12
L2 C20 8.2pF C21 1F C22 1F C23 2.2F C24 0.1F C25 10F 50V C26 100F 50V
Reference circuit schematic for = 2140 MHz Circuit Assembly Information DUT PTFA212401E or PTFA212401F PCB 0.76 mm [.030"] thick, r = 3.5 Microstrip Electrical Characteristics at 2140 MHz 0.018 0.022 0.047 0.034 0.024 0.063 0.043 0.134 0.029 0.262 0.042 0.032 0.014 0.026 0.025 0.017 0.123 , 49.9 , 49.9 , 49.9 , 49.9 , 42.8 , 42.8 / 6.9 , 6.9 , 59.9 , 6.9 , 51.0 , 5.0 , 5.0 , 5.0 / 6.65 , 6.65 / 11.68 , 11.68 / 40.7 , 40.7 , 49.9 7 of 11 LDMOS Transistor RF-35 Dimensions: L x W ( mm) 1.55 x 1.70 1.91 x 1.70 3.99 x 1.70 2.90 x 1.70 2.01 x 2.16 5.28 x 2.16 / 20.32 3.33 x 20.32 11.48 x 1.04 2.21 x 20.32 22.10 x 1.65 3.18 x 28.91 2.41 x 28.91 1.04 x 28.91 / 21.89 2.03 x 21.89 / 11.43 2.13 x 11.43 / 2.34 1.40 x 2.34 10.24 x 1.70
1 oz. copper Dimensions: L x W (in.) 0.061 0.075 0.157 0.114 0.079 0.208 0.131 0.452 0.087 0.870 0.125 0.095 0.041 0.080 0.084 0.055 0.403 x 0.067 x 0.067 x 0.067 x 0.067 x 0.085 x 0.085 / x 0.800 x 0.041 x 0.800 x 0.065 x 1.138 x 1.138 x 1.138 / x 0.862 / x 0.450 / x 0.092 x 0.067
l1 l2 l3 l4 l5 l6 (taper) l7, l8, l9 l10 l11, l12 l13 l14 l15 (taper) l16 (taper) l17 (taper) l18 l19
Data Sheet
0.800
0.862 0.450 0.092
Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C2 C1 R3 R8 C3 C5 C4 C7 C9 C8 C10 C11 C6 R1 QQ1 Q1 R2 C13 C19 C27 C29 C31 C33 C32 C12 C30 C28
C14 L1
C15 C16 C18 C17
R5
R6
J1
C24 C23
J2
R7
C25 C22 C21 C26 L2
C20
Reference circuit assembly diagram* (not to scale)
Component
C1, C2, C3 C4, C10 C5, C11, C17, C24 C6, C12 C7, C31, C32 C8, C33 C9 C13, C20 C14, C15, C21, C22 C16, C23 C18, C25 C19, C26 C27, C28 C29, C30 L1, L2 Q1 QQ1 R1 R2 R3, R5 R4 R6, R7 R8 Data Sheet
Description
Capacitor, 0.001 F Capacitor, 4.7 F, 16 V Capacitor, 0.1 F Ceramic capacitor, 8.2 pF Capacitor, 0.7 pF Ceramic capacitor, 8.2 pF Capacitor, 1.3 pF Capacitor, 8.2 pF Ceramic capacitor, 1 F Capacitor, 2.2 F Tantalum capacitor, 10 F, 50 V Electrolytic capacitor, 100 F, 50 V Capacitor, 0.3 pF Capacitor, 0.5 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Chip resistor 10 ohms Chip resistor 5.1 k-ohms Variable resistor 2 k-ohms
Suggested Manufacturer
Digi-Key Digi-Key Digi-Key ATC AVX ATC ATC AVX Digi-Key Digi-Key Garrett Electronics Digi-Key AVX AVX Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 8 of 11
P/N or Comment
PCC1772CT-ND PCS3475CT-ND PCC104BCT-ND 100A 8R2 08051J0R7BBTTR 100B 8R2 600S1R3BT 100A 8R2 445-1411-1-ND 445-1447-2-ND TPSE106K050R0400 P5571-ND 08051J0R3BBTTR 08051J0R5BBTTR BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND P10ECT-ND P5.1KECT-ND 3224W-202ETR-ND Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-36260-2
2X 12.70 [.500] 45 X 2.031 45 X [.080] C L 4.830.50 [.190.020]
4X R1.52 [R.060]
D
S
C L LID 13.21+0.10 -0.15 .520+.004 -.006
23.370.51 [.920.020]
[
]
13.72 [.540]
2X R1.63 [R.064]
G
C66065-A2324-C001-01-0027
27.94 [1.100]
1.02 [.040]
LID 22.350.23 [.880.009]
4.110.38 [.162.015] 0.0381 [.0015] -AC L 34.04 [1.340] SPH 1.57 [.062]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Interpret dimensions and tolerances per ASME Y14.5M-1994. All tolerances 0.127 [.005] unless specified otherwise. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch]
Data Sheet
9 of 11
Rev. 04, 2009-10-05
PTFA212401E PTFA212401F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.) Package H-37260-2
45 X 2.03 [45 X .080] 2X 12.70 [.500] 4.830.50 [.190.020]
D
23.370.51 [.920.020] LID 13.21+0.10 -0.15 .520+.004 -.006
C L
[
]
13.72 [.540]
[
R0.508+0.381 -0.127 R.020+.015 -.005
]
C L
G
C66065-A2325-C001-01-0027
1.02 [.040]
LID 22.350.23 [.880.009]
4.110.38 [.162.015] 0.0381 [.0015] -AC L SPH 1.57 [.062]
S
23.11 [.910]
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Interpret dimensions and tolerances per ASME Y14.5M-1994. All tolerances 0.127 [.005] unless specified otherwise. Primary dimensions are mm. Alternate dimensions are inches. Pins: D = drain, S = source, G = gate. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. Gold plating thickness: S, D, G - flange & leads: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 04, 2009-10-05
PTFA212401E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-10-05 2009-04-01 Data Sheet Previous Version: Page 2 Subjects (major changes since last revision) Updated characteristics
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2009-10-05 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 04, 2009-10-05

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